Linked by David Adams on Mon 16th May 2011 02:31 UTC
Hardware, Embedded Systems HP scientists have made a small breakthrough in the development of a next-generation memory technology called memristors, which some see as a potential replacement for today's widely used flash and DRAM technologies. In a paper to be published Monday in the journal "Nanotechnology," scientists report that they have mapped out the basic chemistry and structure of what happens inside a memristor during its electrical operation.
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by nickelbackro on Mon 16th May 2011 03:17 UTC
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Hopefully a better understanding of the inner workings of memristors can lead to better cycling speeds. Last I heard a state to state change still takes in the neighborhood of a second which makes it unacceptable for most applications.

However, the idea of memory that is truly persistent based on the integral of the current through it could prove valuable.

Edited 2011-05-16 03:18 UTC

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