SiOx Memory: How it Works

“The recent announcement that Rice University grad student Jun Yao has demonstrated a new memory device has created a stir. As well it should. The new device is non-volatile, offers fast sub-100 ns switching times, can be written 10,000 times and is fully compatible with current CMOS manufacturing processes. A 1,000 bit proof-of-concept chip has been built by a private company.”

5 Comments

  1. 2010-09-09 5:19 am
    • 2010-09-09 5:46 am
      • 2010-09-09 6:11 am
      • 2010-09-10 6:25 am
    • 2010-09-09 5:51 am