Linked by Hadrien Grasland on Tue 25th Jan 2011 15:19 UTC, submitted by M.Onty
Hardware, Embedded Systems Thinking that HP's memristors can't arrive early enough on the market? Here's competition already! A team at North Carolina State University, led by Dr Paul Franzon, has unveiled the "double floating-gate field effect transistor", a component based on the same principles as flash memory which would allow to store data for "a couple of years" in around 15 nanoseconds.
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Comment by boyfarrell
by boyfarrell on Wed 26th Jan 2011 00:37 UTC
boyfarrell
Member since:
2008-12-11

A cool development. The SWITCHING time between the on and the off state is 15ns and this state can be preserved for a few years. The first time I read that it sounded like it could transfer two years of data in 15 nanoseconds! Granted that doesn't make much sense!

Reply Score: 1

RE: Comment by boyfarrell
by Neolander on Wed 26th Jan 2011 06:04 in reply to "Comment by boyfarrell"
Neolander Member since:
2010-03-08

How would you have said it ? I'm not a native English speaker, so I may make mistakes.

Reply Parent Score: 1

RE[2]: Comment by boyfarrell
by Laurence on Wed 26th Jan 2011 14:23 in reply to "RE: Comment by boyfarrell"
Laurence Member since:
2007-03-26

How would you have said it ? I'm not a native English speaker, so I may make mistakes.

It read fine to me.

I think it's just one of those sentences which shouldn't be skimmed, but the actual content itself sounds like it's written correctly.

Reply Parent Score: 2

RE[2]: Comment by boyfarrell
by Zifre on Wed 26th Jan 2011 20:44 in reply to "RE: Comment by boyfarrell"
Zifre Member since:
2009-10-04

How would you have said it ? I'm not a native English speaker, so I may make mistakes.

The sentence looks fine to me, but I would suggest removing the spaces before the question mark and exclamation mark. I think I recall that being common in French (I know I've seen it before), but I don't think it's really correct in English.

Reply Parent Score: 2